AO4442 75v n-channel mosfet general description product summary v ds i d (at v gs =10v) 3.1a r ds(on) (at v gs =10v) < 130m w r ds(on) (at v gs = 4.5v) < 165m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max c/w r q ja 31 59 40 v 25 gate-source voltage drain-source voltage 75 the AO4442 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages from 4.5v to 25v. this device is suitable for use as a load switch or in p wm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 75v a i d 3.1 2.5 20 t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c w 3.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 maximum junction-to-ambient a g ds soic-8 top view bottom view d d d d s s s g rev 2: june 2011 www.aosmd.com page 1 of 5
AO4442 symbol min typ max units bv dss 75 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1 2.4 3 v i d(on) 20 a 100 130 t j =125c 180 220 120 165 m w g fs 8.2 s v sd 0.79 1 v i s 3.5 a c iss 303 350 pf c oss 37 pf c rss 17 pf r g 2.2 3 w q g (10v) 5.2 6.5 nc q g (4.5v) 2.46 3.5 nc q gs 1 nc q gd 1.34 nc t d(on) 4.5 ns t r 2.3 ns t d(off) 15.6 ns t f 1.9 ns t rr 22 30 ns q rr 22 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =3.1a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =37.5v, r l =12 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =37.5v, i d =3.1a gate source charge gate drain charge total gate charge m w i s =1a,v gs =0v v ds =5v, i d =3.1a v gs =4.5v, i d =2a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss m a v ds =v gs , i d =250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =3.1a reverse transfer capacitance i f =3.1a, di/dt=100a/ m s v gs =0v, v ds =37.5v, f=1mhz switching parameters a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedance from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 2: june 2011 www.aosmd.com page 2 of 5
AO4442 typical electrical and thermal characteristics 17 52 10 0 18 40 0 3 6 9 12 15 0 1 2 3 4 5 6 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 80 100 120 140 160 180 200 220 0 2 4 6 8 10 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =2a v gs =10v i d =3.1a 80 100 120 140 160 180 200 220 240 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =3.1a 25c 125c 0 3 6 9 12 15 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3.5v 4v 6v 10v 4.5v 5v rev 2: june 2011 www.aosmd.com page 3 of 5
AO4442 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 0 10 20 30 40 50 60 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =37.5v i d =3.1a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75c/w rev 2: june 2011 www.aosmd.com page 4 of 5
AO4442 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff rev 2: june 2011 www.aosmd.com page 5 of 5
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